Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W NEXPERIA
Product Code: 2N7002NXBKR
Brand
More similar products
Delivery terms
2024-07-18 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.17A; Idm: 0.9A; 0.31W
Useful information
Supplier parameters
Product code
2N7002NXBKR
Case
SOT23
Drain current
0.17A
Drain-source voltage
60V
Features of semiconductor devices
ESD protected gate
Gate charge
1nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
5.7Ω
Polarisation
unipolar
Power dissipation
0.31W
Pulsed drain current
0.9A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
2N7002NXBKR
Product ID
U-2207236
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
