Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23 VISHAY
Product Code: SI2308BDS-T1-GE3
Brand
More similar products
Delivery terms
2024-11-12 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 3234 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23
Useful information
Supplier parameters
Product code
SI2308BDS-T1-GE3
#Promotion
aac_202202
Case
SOT23
Drain current
1.8A
Drain-source voltage
60V
Gate charge
2.3nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
192mΩ
Polarisation
unipolar
Power dissipation
1.06W
Type of transistor
N-MOSFET
Unit price
No
Brand
VISHAY
Supplier's product code
SI2308BDS-T1-GE3
Product ID
U-323650
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
