Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 INFINEON TECHNOLOGIES
Product Code: IPD60R600P7ATMA1
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Supplier parameters
Product code
IPD60R600P7ATMA1
Brand
INFINEON
Case
PG-TO252-3
Drain current
4A
Drain-source voltage
600V
Features of semiconductor devices
ESD protected gate
Gate charge
9nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.6Ω
Polarisation
unipolar
Power dissipation
30W
Pulsed drain current
16A
Technology
CoolMOS™ P7
Type of transistor
N-MOSFET
Supplier's product code
IPD60R600P7ATMA1
Product ID
U-2726621
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
