Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6 ONSEMI
Product Code: FDC2612
Brand
More similar products
Delivery terms
2024-11-25 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 4900 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6 ONSEMI
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Useful information
Supplier parameters
Product code
FDC2612
Brand
ON SEMICONDUCTOR
Supplier's product code
FDC2612
Product ID
U-186836
Case
SuperSOT-6
Drain current
1.1A
Drain-source voltage
200V
Gate charge
11nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
1.43Ω
Polarisation
unipolar
Power dissipation
1.6W
Technology
PowerTrench®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
