Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W IXYS
Product Code: IXTQ130N20T
Brand
More similar products
Delivery terms
2024-08-14 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 14 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Useful information
Supplier parameters
Product code
IXTQ130N20T
Supplier's product code
IXTQ130N20T
Product ID
U-2215966
Case
TO3P
Drain current
75A
Drain-source voltage
200V
Features of semiconductor devices
thrench gate power mosfet
Gate charge
150nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
IXYS
Mounting
THT
On-state resistance
16mΩ
Polarisation
unipolar
Power dissipation
830W
Pulsed drain current
320A
Reverse recovery time
150ns
Technology
Trench™
Type of transistor
N-MOSFET
Brand
IXYS
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
