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Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W MICROCHIP (MICROSEMI)

Product Code: MSC090SMA070B
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Price range

AmountPrice with tax (pcs)
1-24
12.71
25+
12.10
wholesale

Min. qty: 1

Multiplier: 1

Total:

12.71
2024-08-29 Estimated delivery

Delivery terms

2024-08-29 Estimated delivery

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Available35 pcs

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W MICROCHIP (MICROSEMI)

Useful information


Specifications

SKU
U-1906011
Product code
MSC090SMA070B

Supplier product description

Transistor: N-MOSFET; SiC; unipolar; 700V; 20A; Idm: 69A; 90W

Useful information

Supplier parameters

Product code
MSC090SMA070B
Product ID
U-1906011
Case
TO247-3
Drain current
20A
Drain-source voltage
700V
Gate charge
38nC
Kind of channel
enhanced
Manufacturer
MICROCHIP (MICROSEMI)
Mounting
THT
On-state resistance
108mΩ
Polarisation
unipolar
Power dissipation
90W
Pulsed drain current
69A
Technology
SiC
Type of transistor
N-MOSFET
Brand
MICROCHIP
Supplier's product code
MSC090SMA070B
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].