Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W LUGUANG ELECTRONIC
Product Code: LGE3M60065Q
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W LUGUANG ELECTRONIC
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Useful information
Supplier parameters
Product code
LGE3M60065Q
Case
TO247-4
Drain current
36A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
78nC
Gate-source voltage
-4...18V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
LUGUANG ELECTRONIC
Mounting
THT
On-state resistance
75mΩ
Polarisation
unipolar
Power dissipation
208W
Pulsed drain current
97A
Technology
SiC
Type of transistor
N-MOSFET
Brand
LUGUANG ELECTRONIC
Supplier's product code
LGE3M60065Q
Product ID
U-3846317
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
