Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247 INFINEON TECHNOLOGIES
Product Code: IMW65R072M1HXKSA1
Delivery terms
2024-07-23 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 25 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Useful information
Supplier parameters
Product code
IMW65R072M1HXKSA1
Product ID
U-1876351
Case
TO247
Drain current
18A
Drain-source voltage
650V
Gate-source voltage
-5...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
94mΩ
Polarisation
unipolar
Power dissipation
96W
Pulsed drain current
69A
Technology
SiC
Type of transistor
N-MOSFET
Brand
INFINEON
Supplier's product code
IMW65R072M1HXKSA1
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
