Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Product Code: G3R30MT12J
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W GeneSiC SEMICONDUCTOR
Useful information
Specifications
SKU
U-2721685
Product code
G3R30MT12J
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Useful information
Supplier parameters
Product code
G3R30MT12J
Product ID
U-2721685
#Promotion
aac_202202
Case
TO263-7
Drain current
68A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
155nC
Gate-source voltage
-5...15V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
GeneSiC SEMICONDUCTOR
Mounting
SMD
On-state resistance
30mΩ
Polarisation
unipolar
Power dissipation
459W
Pulsed drain current
200A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Supplier's product code
G3R30MT12J
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
