Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W WeEn Semiconductors
Product Code: WNSC2M40120R6Q
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W WeEn Semiconductors
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Useful information
Supplier parameters
Product code
WNSC2M40120R6Q
Case
TO247-4
Drain current
52A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate charge
19nC
Gate-source voltage
-12...22V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
WeEn Semiconductors
Mounting
THT
On-state resistance
55mΩ
Polarisation
unipolar
Power dissipation
405W
Pulsed drain current
100A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
Brand
WeEn Semiconductors
Supplier's product code
WNSC2M40120R6Q
Product ID
U-3092771
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
