Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W INFINEON TECHNOLOGIES
Product Code: IMZ120R350M1HXKSA1
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Useful information
Supplier parameters
Product ID
U-1876358
Case
TO247-4
Drain current
4.7A
Drain-source voltage
1.2kV
Features of semiconductor devices
Kelvin terminal
Gate-source voltage
-7...23V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
INFINEON TECHNOLOGIES
Mounting
THT
On-state resistance
662mΩ
Polarisation
unipolar
Power dissipation
30W
Pulsed drain current
13A
Technology
SiC
Type of transistor
N-MOSFET
Product code
IMZ120R350M1HXKSA1
Brand
INFINEON
Supplier's product code
IMZ120R350M1HXKSA1
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
