Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W NEXPERIA
Product Code: NSF080120L3A0Q
Brand
More similar products
Delivery terms
2024-07-18 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 29 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W
Useful information
Supplier parameters
Product code
NSF080120L3A0Q
Product ID
U-3792417
Case
TO247-3
Drain current
25A
Drain-source voltage
1.2kV
Gate charge
52nC
Gate-source voltage
-10...22V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
NEXPERIA
Mounting
THT
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
183W
Pulsed drain current
80A
Technology
SiC
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
NSF080120L3A0Q
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
