Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 ROHM SEMICONDUCTOR
Product Code: SCT3120ALGC11
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Supplier parameters
Product code
SCT3120ALGC11
Brand
ROYAL OHM
Supplier's product code
SCT3120ALGC11
Product ID
U-2966387
Case
TO247
Drain current
21A
Drain-source voltage
650V
Gate charge
38nC
Gate-source voltage
-4...22V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
ROHM SEMICONDUCTOR
Mounting
THT
On-state resistance
156mΩ
Polarisation
unipolar
Power dissipation
103W
Pulsed drain current
52A
Technology
SiC
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
