Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A IXYS

Product Code: MMIX1F230N20T
no gallery
no gallery
Brand

Sorry, we no longer have this product.

We recommend choosing from:

Other products in this category

Delivery terms

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Not availableNot available

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€4.50

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

Brand
Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A IXYS

Useful information


Specifications

SKU
U-261733
Brand
Product code
MMIX1F230N20T

Supplier product description

Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A

Useful information

Supplier parameters

Product code
MMIX1F230N20T
Brand
IXYS
Supplier's product code
MMIX1F230N20T
Product ID
U-261733
Case
SMPD
Drain current
156A
Drain-source voltage
200V
Gate charge
358nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
IXYS
Mounting
SMD
On-state resistance
8.3mΩ
Polarisation
unipolar
Power dissipation
600W
Pulsed drain current
630A
Reverse recovery time
200ns
Technology
HiPerFET™
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].