Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23 DIODES INCORPORATED
Product Code: DMN601K-7
Brand
More similar products
Delivery terms
2024-08-16 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 875 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23 DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Supplier parameters
Product code
DMN601K-7
Brand
DIODES INCORPORATED
Supplier's product code
DMN601K-7
Product ID
U-2876211
Case
SOT23
Drain current
0.3A
Drain-source voltage
60V
Features of semiconductor devices
ESD protected gate
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
3Ω
Polarisation
unipolar
Power dissipation
0.35W
Pulsed drain current
0.8A
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
