Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W DIODES INCORPORATED
Product Code: DMN10H170SFDE-7
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W DIODES INCORPORATED
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W
Supplier parameters
Product code
DMN10H170SFDE-7
Product ID
U-2876059
Case
U-DFN2020-6
Drain current
2.7A
Drain-source voltage
100V
Gate charge
9.7nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
0.2Ω
Polarisation
unipolar
Power dissipation
1.31W
Pulsed drain current
10A
Type of transistor
N-MOSFET
Brand
DIODES INCORPORATED
Supplier's product code
DMN10H170SFDE-7
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
