Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Product Code: TSG65N068CE-RVG
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Specifications
Supplier product description
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Supplier parameters
Product code
TSG65N068CE-RVG
Case
PDFN88
Drain current
30A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
6.7nC
Gate-source voltage
-10...7V
Kind of channel
enhanced
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
TAIWAN SEMICONDUCTOR
Mounting
SMD
On-state resistance
68mΩ
Polarisation
unipolar
Pulsed drain current
60A
Technology
GaN
Type of transistor
N-JFET
Unit price
No
Brand
TAIWAN SEMICONDUCTOR
Supplier's product code
TSG65N068CE-RVG
Product ID
U-4157842
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
