Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A INFINEON TECHNOLOGIES
Product Code: IGT60R190D1SATMA1
Delivery terms
2024-07-25 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 7 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Useful information
Supplier parameters
Product code
IGT60R190D1SATMA1
Brand
INFINEON
Supplier's product code
IGT60R190D1SATMA1
Product ID
U-215194
Case
PG-HSOF-8-3
Drain current
12.5A
Drain-source voltage
600V
Gate charge
3.2nC
Gate current
7.7mA
Gate-source voltage
-10V
Kind of channel
enhanced
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.19Ω
Polarisation
unipolar
Power dissipation
55.5W
Pulsed drain current
23A
Technology
CoolGaN™
Type of transistor
N-JFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
