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Transistor MOS-N-Ch+Z-Dio 600V 4A 70W 2R TO220

Product Code: STP4NK60Z
New!

Price range

AmountPrice with tax (pcs)
1+
-50%
1.001.99
wholesale

Min. qty: 1

Unit: pcs

Total:

1.00

lemona shopPickup in department 1-5 b.d.

Available41 pcs
Central Warehouse
Not availableNot available
Tallinn Office

home deliveryHome delivery 1-5 b.d.

Shipping parcelDelivery to DPD Pickup locations 1-5 b.d.


Delivery terms

lemona shop

Pickup in department

Pickup in department For free

Orders are processed and shipped on weekdays from 8:00 a.m. to 5:00 p.m. When your order is ready for collection, we will inform you by SMS and e-mail.

Quantity in shop

Available41 pcs
Central Warehouse
Not availableNot available
Tallinn Office
home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€5.00

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

MOS-N-Ch+Z-Dio 600V 4A 70W 2R TO220

Useful information


Specifications

SKU
65166
Weight
0.001 kg.
Power, W
70
Housing
TO220
Current, A
4
Structure
MOS-N-Ch+Z-Dio
Product code
STP4NK60Z
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Experimental product description generated by artificial intelligence

The STP4NK60Z and STP4NK60ZFP are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™™ technology, achieved through optimization of ST's well established strip-based PowerMESH™™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

These devices are ideal for switching applications. They are 100% avalanche tested and feature very low intrinsic capacitances. The Zener-protected design eliminates the need for external components.

Why choose this product?

  • High dv/dt capability
  • Low on-resistance
  • Zener-protected
  • 100% avalanche tested
  • Very low intrinsic capacitances

This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].