Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 IXYS
Product Code: IXBT42N170A
Brand
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Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Useful information
Supplier parameters
Product code
IXBT42N170A
Brand
IXYS
Supplier's product code
IXBT42N170A
Product ID
U-220347
#Promotion
aac_202202
Case
TO268
Collector current
21A
Collector-emitter voltage
1.7kV
Features of semiconductor devices
high voltage
Gate charge
188nC
Gate-emitter voltage
±20V
Kind of package
tube
Manufacturer
IXYS
Mounting
SMD
Power dissipation
357W
Pulsed collector current
265A
Technology
BiMOSFET™
Type of transistor
IGBT
Turn-off time
308ns
Turn-on time
33ns
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
