Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW TOSHIBA
Product Code: 2SK3475
Brand
More similar products
Delivery terms
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 75 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Useful information
Supplier parameters
Product code
2SK3475
Case
SOT89
Drain current
1A
Drain-source voltage
20V
Efficiency
45%
Electrical mounting
SMT
Frequency
520MHz
Gate-source voltage
±10V
Kind of channel
depleted
Kind of package
tape
Kind of transistor
RF
Manufacturer
TOSHIBA
Open-loop gain
14.9dB
Output power
630mW
Polarisation
unipolar
Power dissipation
3W
Type of transistor
N-MOSFET
Brand
TOSHIBA
Supplier's product code
2SK3475
Product ID
U-80356
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
