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MOSFET, N-CH, 200V, 39.6A, 125W

Product Code: SIDR610DP-T1-GE3
The photo is for illustration only. Please refer to the description for exact product specifications.
Brand
More similar products

Price range

AmountPrice with tax (pcs)
1-9
5.135.13
10-99
3.83
100-499
3.57
500-999
3.31
1000+
3.05
wholesale

Min. qty: 1

Multiplier: 1

Total:

5.13
2025-04-30 Estimated delivery

Delivery terms

2025-04-30 Estimated delivery

Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail

Available980 pcs

Supplier Warehouse

home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.

Over €25.00

(Orders up to 1000 kgs)

For free

To €25.00

(Orders up to 1000 kgs)

€5.00

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.

€3.50

Product description

MOSFET, N-CH, 200V, 39.6A, 125W

Useful information


Specifications

SKU
U-1900366
Brand
Product code
SIDR610DP-T1-GE3

Supplier product description

MOSFET, N-CH, 200V, 39.6A, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:39.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0239ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

Useful information

Supplier parameters

Product code
SIDR610DP-T1-GE3
Brand
VISHAY
Supplier's product code
3014141
Product ID
U-1900366
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].