MOSFET, N-CH, 200V, 39.6A, 125W
Product Code: SIDR610DP-T1-GE3
Brand
More similar products
Delivery terms
2024-07-24 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 2630 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
MOSFET, N-CH, 200V, 39.6A, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:39.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0239ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
Useful information
Supplier parameters
Product code
SIDR610DP-T1-GE3
Brand
VISHAY
Supplier's product code
3014141
Product ID
U-1900366
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
