Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A VISHAY
Tootekood: SIR826BDP-T1-RE3
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25,00 €-le (Tellimused kuni 1000 kgs) | Tasuta |
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
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Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A VISHAY
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Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 80.8A; Idm: 200A
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Product code
SIR826BDP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR826BDP-T1-RE3
Product ID
U-3116514
Case
PowerPAK® SO8
Drain current
80.8A
Drain-source voltage
80V
Gate charge
69nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
6.2mΩ
Polarisation
unipolar
Power dissipation
83W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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