Transistor MOS-N-Ch 55V 29A 68W <40mom (16A)
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Transistor MOS-N-Ch 55V 29A 68W
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Transistor MOS-N-Ch 55V 26A 56W TO220AB
The INTERNATIONAL RECTIFIER IRFZ34N, also known as a power MOSFET, is a high-performance N-channel metal-oxide-semiconductor field-effect transistor. This component is part of the HEXFET family, renowned for its advanced process technology and efficiency.
Key Features and Parameters
- 55V Drain-to-Source Breakdown Voltage
- 26A Continuous Drain Current
- 56W Power Dissipation
- TO-220AB Package
- Ultra Low On-Resistance
- Fast Switching
- Ease of Paralleling
Applications
The IRFZ34N's robust design and high power handling capabilities make it suitable for a wide range of applications in commercial and industrial settings. Its TO-220AB package is widely preferred for its low thermal resistance and cost-effectiveness.
Why Choose this Product?
The INTERNATIONAL RECTIFIER IRFZ34N offers a compelling combination of performance, reliability, and ease of use. Its advanced design ensures efficient operation, while its rugged construction guarantees long-term durability. The TO-220AB package is a standard in the industry, simplifying integration into existing designs.
| Parameter | Value |
|---|---|
| Voltage | 55V |
| Current | 26A |
| Power | 56W |
| Package | TO-220AB |
This MOSFET is an excellent choice for designers seeking a high-performance, reliable, and cost-effective solution for their power management needs.
This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:
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- Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
- Name or Model Discrepancies: AI may misrepresent the product name or model.
If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail toš you: [email protected].
