Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB YANGJIE TECHNOLOGY
Tootekood: YJ4N65CZ-YAN
Bränd
Rohkem sarnaseid tooteid
Kättetoimetamise tähtajad
Kaup tellitakse tarnija laost. Kui tarnijal ei ole võimalik tarnida kaupa näidatud kuupäevani, informeerime teid epostitsi.
 Ei ole saadaval | Tarnija ladu |
Kulleriga koju
Kulleriga koju
Üle 25,00 € (Tellimused kuni 1000 kgs) | Tasuta |
25,00 €-le (Tellimused kuni 1000 kgs) | 4,50 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.
3,50 €
Kauba kirjeldus
Bränd
Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB YANGJIE TECHNOLOGY
Tehnilised andmed
Tarnija toote kirjeldus
Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Tarnija toote parameetrid
Product code
YJ4N65CZ-YAN
Brand
YANGJIE TECHNOLOGY
Supplier's product code
YJ4N65CZ-YAN
Product ID
U-1928807
#Promotion
aac_202202
Case
TO220AB
Drain current
4A
Drain-source voltage
650V
Gate charge
20nC
Gate-source voltage
±20V
Heatsink thickness
max. 1.33mm
Kind of channel
enhanced
Kind of package
tube
Manufacturer
YANGJIE TECHNOLOGY
Mounting
THT
On-state resistance
2.6Ω
Polarisation
unipolar
Power dissipation
100W
Pulsed drain current
16A
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
