Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 VISHAY
Product Code: SI2365EDS-T1-GE3
Brand
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Delivery terms
2024-10-07 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 4414 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Supplier product description
Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Supplier parameters
Product code
SI2365EDS-T1-GE3
Case
SOT23
Drain current
-4.5A
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
36nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
32mΩ
Polarisation
unipolar
Power dissipation
1.1W
Pulsed drain current
-20A
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI2365EDS-T1-GE3
Product ID
U-3121220
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
