Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Product Code: WMJ80N65F2-CYG
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Delivery terms
2024-10-04 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 100 pcs | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Useful information
Specifications
SKU
U-384147
Product code
WMJ80N65F2-CYG
Supplier product description
Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Useful information
Supplier parameters
Product code
WMJ80N65F2-CYG
Supplier's product code
WMJ80N65F2-CYG
Product ID
U-384147
Case
TO247-3
Drain current
45A
Drain-source voltage
650V
Gate charge
26.2nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
WAYON
Mounting
THT
On-state resistance
37mΩ
Polarisation
unipolar
Power dissipation
410W
Pulsed drain current
245A
Reverse recovery time
190ns
Technology
WMOS™ F2
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
